MMBT4403 features switching transistor marking MMBT4403=2t maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -40 v v ceo collector-emitter voltage -40 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.6 a p c collector power dissipation 0.3 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c =-100 a , i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -1ma , i b =0 -40 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-35v, i e =0 -0.1 a collector cut-off current i ceo v ce =-35 v, i b =0 -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a dc current gain h fe v ce =-2v, i c = -150ma 100 300 collector-emitter saturation voltage v ce(sat) i c =-150ma, i b =-15ma -0.4 v base-emitter saturation voltage v be(sat) i c =- 150ma, i b =-15ma -0.95 v transition frequency f t v ce = -10v, i c = -20ma f = 100mhz 200 mhz sot-23 1. base 2. emitter 3. collector transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
MMBT4403 2 date:2011/05 www.htsemi.com semiconductor jinyu
MMBT4403 3 date:2011/05 www.htsemi.com semiconductor jinyu
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